Computer atomic scale simulation of the homoepitaxial growth of GaAs (100)‎

Abstract EN

-By using the Monte Carlo methods we have developed an atomic scale simulation of the molecular beam epitaxial (MBE) growth of well lattice matched III-V semiconductors applied to the system GaAs/GaAs(100).

The coming flux species taking account are the Gallium atoms and the arsenic molecules in the diatomic form (say As,).

Two kinds of interaction mechanisms are allowed to occur on the growth surface: the interaction Galliwn-surface and the interaction As rsurf ace.

In our simulation we have considered that the molecules As? are firstly adsorbed in the physisorbed state before to exceed to the chemisorbed state.

We denote that, up-to-date, no models of simulation have taken into account the energetic model for the physisorbed state of the arsenic.

The results obtained and reported here concern the mode of the growth and some parameters that the front profile of one GaAs/GaAsd 00) monolayer has been influenced.