Influence of the band-band interaction on the dispersion and density of states of surface carriers in Hg1xCdxTe at finite temperature

Abstract EN

The influence of the interaction between the conduction band Γᶜ6 and the valence band Γᵛ8 (band-band interaction) on the dispersion E+ᵣ(k) and the density of states Dr(E) of the quasi-two-dimensional electron gas in inversion layers on Hg1xCdxTe is investigated, using a finite-temperature self-consistent procedure.

As a result of the band-band interaction the dispersion and the density of states of the sub-band states become non-parabolic.

The non-parabolicity is described quantitatively and it is shown that it increases with the sub-band index r = 0,1, 2, ..., and decreases with the temperature T and the alloy composition x..