Analysis and modeling of the noise sources of the MFET

Abstract EN

This paper presents a study of noise in a composite transistor circuit referred to as the Modified Field-Effect Transistor or MFET.

The MFET structure which basically comprises a Junction Field Effect Transistor (JFET) and a Bipolar Junction Transistor (BJT) offers FET-like characteristics with great improvements in transfer curve linearity, and thermal operational stability over a wide range of input voltage and operating temperature with a precisely controllable gain.

The present work involves the analysis and development of a noise model as well as a study of the noise characteristics.

The method used in analyzing the composite circuit is by replacing each element in the MFET by its equivalent noise model, and then computing the overall circuit noise.