A novel oxide vertical MOSFET (OVMOS)‎ transistor structure

Abstract EN

A novel high-density oxide vertical MOS (OVMOS) transistor with compact structure has been developed for future MOS devices.

This transistor, whose gate electrode surrounds only two sides of the pillar silicon island, reduces the occupied area for all kinds of circuits.

More than 70% of the occupied area can be saved with the new structure, which will be suitable for future ULSI’s.

Other advantages are steep cut-off characteristics (low subthreshold swing S = 73 mV/decade) and small substrate bias effects.

Also the channel length of OVMOS is independent on the technology linewidth and high performance could be achieved with OVMOS circuits for any scale of integration.