Photoluminescence from etched silicon surface by high power laser

Abstract EN

Porous silicon layers (P-Si) has been prepared in this work via Laser-induced etching process (LIE) of n-type silicon wafer of 3 Ω.cm resistivity in hydrofluoric (HF) acid of 24.5 % concentration at different etching times (5-25min.).

The irradiation has been achieved using laser beam of 2W power and 810 nm wavelength.

The morphological and photoluminescence characteristics of these layers such as porosity, surface morphology and nanocrystallite size have been investigated using scanning electron microscope (SEM) and photoluminescence (PL) measurements and the gravimetric method.