Analytical study of near mobility edge density of states of hydrogenated amorphous silicon

Abstract EN

Experimental results for the density of states of hydrogenated amorphous silicon due to Jackson et al near the valence and conduction band edges were analyzed using Levenberg-Marquardt nonlinear fitting method.

It is found that the density of states of the valence band and the conduction band can be fitted to a simple power law, with a power index 0.60 near the valence band edge, and 0.55 near the conduction band edge.

These results indicate a modest but noticeable deviation from the square root law (power index = 0.5) which is found in crystalline semiconductors.

Analysis of Jackson et al density of states integral J (E) data over about (1.4 eV) of photon energy range, showed a significant fit to a simple power law with a power index of 2.11 close to that predicted from the density of states fitting results 2.15.