Design and simulation of RF CMOS power amplifiers for bluetooth systems

Dissertant

Ghayyib, Sarab Muhyi al-Din

Thesis advisor

Izz al-Din, Ahmad Sadun
Isa, Abbas H.

University

University of Technology

Faculty

-

Department

Department of Electrical Engineering

University Country

Iraq

Degree

Master

Degree Date

2013

English Abstract

Increased consumer’s demand for portable wireless communication systems of low cost, power efficient, reliable, and of small size, deemed it necessary to seek viable solutions to high levels of integration, via utilization of modern Complementary Metal Oxide Semiconductor (CMOS) technologies for Power Amplifiers (PAs).

In this work, two high-performance Radio-Frequency (RF) PAs for Bluetooth systems are designed and simulated, in deep submicron (0.13 μm) CMOS process technology, using “Microwave Office 2009” together with “BSIM3 v3.3” the simulation module for Metal Oxide Semiconductor Field Effect Transistor (MOSFET) devices.

Several techniques such as differential topology and on-chip low-insertion loss transformer are investigated and used for solving most problems associated with the two RF CMOS PA designs.

The first part of the work presents a 2.4 GHz differential Class-E PA, utilizing two ideal transformers, for Bluetooth systems, in a 0.13 μm CMOS process.

The amplifier delivers 1-dB compression output power of 20.78 dBm, power gain of 16.57 dB, and 65.59 % power added efficiency (PAE) at 2.4 GHz with a 1 V supply.

From available published literature regarding Bluetooth CMOS PAs, this amplifier has the highest efficiency and lowest supply voltage.

In the second part of the work, a 2.4 GHz differential pair Class-E PA with two ideal RF power transformers is designed for Bluetooth systems, in a 0.13 μm CMOS process.

This design is proposed to mitigate the voltage stress on each active CMOS device; hereby it prevents the device from breaking down.

The PA provides output power of 22.83 dBm, power gain of 17.83 dB, and 31.13 % PAE at 2.4 GHz with 1 V.

This amplifier has the highest PAE and lowest supply voltage compared with the reported CMOS PAs.

Finally, in the third part of the work, on-chip transformers for proposed PAs are designed and improved in order to realize fully integrated Bluetooth PA.

Segmenting and interleaving wide metal traces technique is used to achieve high magnetic coupling coefficient and thereby low-insertion loss.

In addition, two different structures for on-chip transformer are proposed and tested in order to use the best structure.

On-chip transformers are simulated using EMSight simulator of Microwave Office 2009 (version 9.0) RF/Microwave software tools.

Main Subjects

Electronic engineering

• APA
• MLA
• AMA

Language

English

Data Type

Arab Theses

Record ID

BIM-418529