The impact of CNTFET's physical parameters on its DIBL effect

Joint Authors

Azizi, C.
Rechem, D.
Khial, A.

Source

Journal of New Technology and Materials / Larbi Ben M'hidi Oum el-Bouaghi University.

Publisher

Larbi Ben M'hidi Oum el-Bouaghi University

Publication Date

2014-05-31

Country of Publication

Algeria

No. of Pages

4

Main Subjects

Materials Science , Minerals

Topics

• Semiconductors
• Electronics

English Abstract

The aim of this paper is to research the impact of physical parameters ; gate length and nanotube diameter which characterize the CNTFET transistors structure on the drain-induced barrier lowering (DIBL) with temperatures ranging from 400 K down to 77 K.

Using the 2-D numerical Non-Equilibrium Green's Function (NEGF) simulation over the entire device.

In fact the work in hand involves the DIBL effect as a function of the gate length taken from10 nm to 30 nm.

Then the variation of DIBL effect as a function of the nanotubes diameter varying over the following chiralities : (13, 0), (16, 0), (19, 0), (23, 0) and (25, 0) was undertaken.

By adjusting the values of CNTFET physical parameters the accepted DIBL can be achieved.

Moreover we observe a considerable reduction of DIBL when the temperature goes down to 77 K.

Data Type

Conference Papers

Record ID

BIM-430023

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