Effect of Al doping on the properties of electrodeposited ZnO nanostructures

Joint Authors

Khalladi, Muhammad Rida
Azizi, Amur
Baka, Ouidad

Source

Journal of New Technology and Materials / Larbi Ben M'hidi Oum el-Bouaghi University.

Publisher

Larbi Ben M'hidi Oum el-Bouaghi University

Publication Date

2014-05-31

Country of Publication

Algeria

No. of Pages

6

Main Subjects

Physics

Topics

• Electrical properties

English Abstract

In this study, Al-doped zinc oxide (AZO) nanostructures are prepared on polycrystalline fluorine-doped tin oxide (FTO)-coated conducting glass substrates from nitrates baths by the electrodeposition process at 70 °C.

The electrochemical, morphological, structural and optical properties of the AZO nanostructures were investigated in terms of different Al concentration in the starting solution.

It was found from the Mott–Schottky (M-S) plot that the carrier density of AZO nanostructures varied between 3.111020 to 5.561020 cm-3 when the Al concentration was between 0 and 5 mM.

Atomic force microscopie (FM) images reveal that the concentration of Al has a very significant influence on the surface morphology and roughness of AZO thin films.

X-ray diffraction (XRD) patterns demonstrate preferential (002) crystallographic orientation having c-axis perpendicular to the surface of the substrate and average crystallites size of the films was about 23–36 nm.

As compared to pure ZnO, Al-doped ZnO exhibited lower crystallinity and there is a shift in the (002) diffraction peak to higher angles.

ZnO nanostructures were found to be highly transparent and had an average transmittance of 80 % in the visible range of the spectrum.

After the incorporation of Al content into ZnO the average transmittance increased and the band-gap tuning was also achieved (from 3.22 to 3.47 eV).

Data Type

Conference Papers

Record ID

BIM-430141

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