High-Temperature Electroluminescence of InGaNGaN Light-Emitting Devices with Multiple Quantum Barriers
Author
Source
Advances in Condensed Matter Physics
Issue
Vol. 2012, Issue 2012 (31 Dec. 2012), pp.1-7, 7 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2012-10-31
Country of Publication
Egypt
No. of Pages
7
Main Subjects
Abstract EN
We investigate the high-temperature characteristics of InGaN/GaN multiple quantum well light-emitting devices with and without multiple quantum barriers (MQBs) in depth.
The electroluminescence measurements were carried out over a temperature range from 200 to 380 K and an injection current level from 1 to 100 mA.
Enhanced carrier confinement and stronger carrier localization in the active layer are achieved for the sample with MQBs.
Furthermore, it is found that the external quantum efficiency of the sample possessing MQBs is higher than that of the sample with GaN barriers.
The MQB structure improves the high-temperature operation of light-emitting devices.
American Psychological Association (APA)
Wu, Ya-Fen. 2012. High-Temperature Electroluminescence of InGaNGaN Light-Emitting Devices with Multiple Quantum Barriers. Advances in Condensed Matter Physics،Vol. 2012, no. 2012, pp.1-7.
https://search.emarefa.net/detail/BIM-449331
Modern Language Association (MLA)
Wu, Ya-Fen. High-Temperature Electroluminescence of InGaNGaN Light-Emitting Devices with Multiple Quantum Barriers. Advances in Condensed Matter Physics No. 2012 (2012), pp.1-7.
https://search.emarefa.net/detail/BIM-449331
American Medical Association (AMA)
Wu, Ya-Fen. High-Temperature Electroluminescence of InGaNGaN Light-Emitting Devices with Multiple Quantum Barriers. Advances in Condensed Matter Physics. 2012. Vol. 2012, no. 2012, pp.1-7.
https://search.emarefa.net/detail/BIM-449331
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-449331
