Fabrication of Cu–Zn–Sn–S–O Thin Films by the Electrochemical Deposition Method and Application to Heterojunction Cells
Joint Authors
Source
International Journal of Photoenergy
Issue
Vol. 2012, Issue 2012 (31 Dec. 2012), pp.1-6, 6 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2012-08-29
Country of Publication
Egypt
No. of Pages
6
Main Subjects
Abstract EN
A new multinary semiconductor Cu2ZnSnS4−xOx (CZTSO), which does not contain toxic elements and expensive rare metals, was fabricated by the electrochemical deposition (ECD) method.
CZTSO thin films were deposited onto indium tin oxide (ITO-) coated glass substrates by DC and two-step pulsed ECD from aqueous solutions containing CuSO4, ZnSO4, SnSO4, and Na2S2O3.
The films deposited by pulsed ECD contained smaller amount of oxygen than those deposited by DC ECD.
The films had band gap energies in a range from 1.5 eV and 2.1 eV.
By a photoelectrochemical measurement, it was confirmed that CZTSO films showed p-type conduction and photosensitivity.
CZTSO/ZnO heterojunctions exhibited rectification properties in a current-voltage measurement.
American Psychological Association (APA)
Yang, Kai& Ichimura, Masaya. 2012. Fabrication of Cu–Zn–Sn–S–O Thin Films by the Electrochemical Deposition Method and Application to Heterojunction Cells. International Journal of Photoenergy،Vol. 2012, no. 2012, pp.1-6.
https://search.emarefa.net/detail/BIM-450183
Modern Language Association (MLA)
Yang, Kai& Ichimura, Masaya. Fabrication of Cu–Zn–Sn–S–O Thin Films by the Electrochemical Deposition Method and Application to Heterojunction Cells. International Journal of Photoenergy No. 2012 (2012), pp.1-6.
https://search.emarefa.net/detail/BIM-450183
American Medical Association (AMA)
Yang, Kai& Ichimura, Masaya. Fabrication of Cu–Zn–Sn–S–O Thin Films by the Electrochemical Deposition Method and Application to Heterojunction Cells. International Journal of Photoenergy. 2012. Vol. 2012, no. 2012, pp.1-6.
https://search.emarefa.net/detail/BIM-450183
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-450183