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Radiation Damage in Electronic Memory Devices
Joint Authors
Vujisić, Miloš
Fetahović, Irfan
Pejović, Milić
Source
International Journal of Photoenergy
Issue
Vol. 2013, Issue 2013 (31 Dec. 2013), pp.1-5, 5 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2013-06-16
Country of Publication
Egypt
No. of Pages
5
Main Subjects
Abstract EN
This paper investigates the behavior of semiconductor memories exposed to radiation in order to establish their applicability in a radiation environment.
The experimental procedure has been used to test radiation hardness of commercial semiconductor memories.
Different types of memory chips have been exposed to indirect ionizing radiation by changing radiation dose intensity.
The effect of direct ionizing radiation on semiconductor memory behavior has been analyzed by using Monte Carlo simulation method.
Obtained results show that gamma radiation causes decrease in threshold voltage, being proportional to the absorbed dose of radiation.
Monte Carlo simulations of radiation interaction with material proved to be significant and can be a good estimation tool in probing semiconductor memory behavior in radiation environment.
American Psychological Association (APA)
Fetahović, Irfan& Pejović, Milić& Vujisić, Miloš. 2013. Radiation Damage in Electronic Memory Devices. International Journal of Photoenergy،Vol. 2013, no. 2013, pp.1-5.
https://search.emarefa.net/detail/BIM-451469
Modern Language Association (MLA)
Fetahović, Irfan…[et al.]. Radiation Damage in Electronic Memory Devices. International Journal of Photoenergy No. 2013 (2013), pp.1-5.
https://search.emarefa.net/detail/BIM-451469
American Medical Association (AMA)
Fetahović, Irfan& Pejović, Milić& Vujisić, Miloš. Radiation Damage in Electronic Memory Devices. International Journal of Photoenergy. 2013. Vol. 2013, no. 2013, pp.1-5.
https://search.emarefa.net/detail/BIM-451469
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-451469