Barrier Inhomogeneity and Electrical Properties of InN NanodotsSi Heterojunction Diodes
Joint Authors
Kumar, Mahesh
Kalghatgi, A. T.
Krupanidhi, S. B.
Bhat, Thirumaleshwara N.
Rajpalke, Mohana K.
Roul, Basanta
Source
Issue
Vol. 2011, Issue 2011 (31 Dec. 2011), pp.1-7, 7 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2011-11-24
Country of Publication
Egypt
No. of Pages
7
Main Subjects
Engineering Sciences and Information Technology
Chemistry
Civil Engineering
Abstract EN
The electrical transport behavior of n-n indium nitride nanodot-silicon (InN ND-Si) heterostructure Schottky diodes is reported here, which have been fabricated by plasma-assisted molecular beam epitaxy.
InN ND structures were grown on a 20 nm InN buffer layer on Si substrates.
These dots were found to be single crystalline and grown along [0 0 0 1] direction.
Temperature-dependent current density-voltage plots (J-V-T) reveal that the ideality factor (η) and Schottky barrier height (SBH) (ΦB) are temperature dependent.
The incorrect values of the Richardson constant (A**) produced suggest an inhomogeneous barrier.
Descriptions of the experimental results were explained by using two models.
First one is barrier height inhomogeneities (BHIs) model, in which considering an effective area of the inhomogeneous contact provided a procedure for a correct determination of A**.
The Richardson constant is extracted ~110 A cm-2 K-2 using the BHI model and that is in very good agreement with the theoretical value of 112 A cm-2 K-2.
The second model uses Gaussian statistics and by this, mean barrier height Φ0 and A** were found to be 0.69 eV and 113 A cm-2 K-2, respectively.
American Psychological Association (APA)
Kumar, Mahesh& Roul, Basanta& Bhat, Thirumaleshwara N.& Rajpalke, Mohana K.& Kalghatgi, A. T.& Krupanidhi, S. B.. 2011. Barrier Inhomogeneity and Electrical Properties of InN NanodotsSi Heterojunction Diodes. Journal of Nanomaterials،Vol. 2011, no. 2011, pp.1-7.
https://search.emarefa.net/detail/BIM-453106
Modern Language Association (MLA)
Kumar, Mahesh…[et al.]. Barrier Inhomogeneity and Electrical Properties of InN NanodotsSi Heterojunction Diodes. Journal of Nanomaterials No. 2011 (2011), pp.1-7.
https://search.emarefa.net/detail/BIM-453106
American Medical Association (AMA)
Kumar, Mahesh& Roul, Basanta& Bhat, Thirumaleshwara N.& Rajpalke, Mohana K.& Kalghatgi, A. T.& Krupanidhi, S. B.. Barrier Inhomogeneity and Electrical Properties of InN NanodotsSi Heterojunction Diodes. Journal of Nanomaterials. 2011. Vol. 2011, no. 2011, pp.1-7.
https://search.emarefa.net/detail/BIM-453106
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-453106