Theoretical Study of Carbon Clusters in Silicon Carbide Nanowires
Joint Authors
Source
Issue
Vol. 2011, Issue 2011 (31 Dec. 2011), pp.1-8, 8 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2011-07-18
Country of Publication
Egypt
No. of Pages
8
Main Subjects
Engineering Sciences and Information Technology
Chemistry
Abstract EN
Using first-principles methods we performed a theoretical study of carbon clusters in silicon carbide (SiC) nanowires.
We examined small clusters with carbon interstitials and antisites in hydrogen-passivated SiC nanowires growth along the [100] and [111] directions.
The formation energies of these clusters were calculated as a function of the carbon concentration.
We verified that the energetic stability of the carbon defects in SiC nanowires depends strongly on the composition of the nanowire surface: the energetically most favorable configuration in carbon-coated [100] SiC nanowire is not expected to occur in silicon-coated [100] SiC nanowire.
The binding energies of some aggregates were also obtained, and they indicate that the formation of carbon clusters in SiC nanowires is energetically favored.
American Psychological Association (APA)
Morbec, J. M.& Miwa, R. H.. 2011. Theoretical Study of Carbon Clusters in Silicon Carbide Nanowires. Journal of Nanotechnology،Vol. 2011, no. 2011, pp.1-8.
https://search.emarefa.net/detail/BIM-454142
Modern Language Association (MLA)
Morbec, J. M.& Miwa, R. H.. Theoretical Study of Carbon Clusters in Silicon Carbide Nanowires. Journal of Nanotechnology No. 2011 (2011), pp.1-8.
https://search.emarefa.net/detail/BIM-454142
American Medical Association (AMA)
Morbec, J. M.& Miwa, R. H.. Theoretical Study of Carbon Clusters in Silicon Carbide Nanowires. Journal of Nanotechnology. 2011. Vol. 2011, no. 2011, pp.1-8.
https://search.emarefa.net/detail/BIM-454142
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-454142