Wafer-Fused Optically Pumped VECSELs Emitting in the 1310-nm and 1550-nm Wavebands

Abstract EN

1300-nm, 1550-nm, and 1480-nm wavelength, optically pumped VECSELs based on wafer-fused InAlGaAs/InP-AlGaAs/GaAs gain mirrors with intracavity diamond heat spreaders are described.

These devices demonstrate very low thermal impedance of 4 K/W.

Maximum CW output of devices with 5 groups of quantum wells shows CW output power of 2.7 W from 180 μm apertures in both the 1300-nm and the 1550-nm bands.

Devices with 3 groups of quantum wells emitting at 1480 nm and with the same aperture size show CW output of 4.8 W.

These VECSELs emit a high-quality beam with M2 beam parameter below 1.6 allowing reaching a coupling efficiency as high as 70% into a single-mode fiber.

Maximum value of output power of 6.6 W was reached for 1300 nm wavelength devices with 290 μm aperture size.

Based on these VECSELs, second harmonic emission at 650 nm wavelength with a record output of 3 W and Raman fiber lasers with 0.5 W emission at 1600 nm have been demonstrated.