InAsGaSb Type-II Superlattice Detectors
Author
Source
Issue
Vol. 2014, Issue 2014 (31 Dec. 2014), pp.1-12, 12 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2014-04-10
Country of Publication
Egypt
No. of Pages
12
Main Subjects
Abstract EN
InAs/(In,Ga)Sb type-II strained layer superlattices (T2SLs) have made significant progress since they were first proposed as an infrared (IR) sensing material more than three decades ago.
Numerous theoretically predicted advantages that T2SL offers over present-day detection technologies, heterojunction engineering capabilities, and technological preferences make T2SL technology promising candidate for the realization of high performance IR imagers.
Despite concentrated efforts of many research groups, the T2SLs have not revealed full potential yet.
This paper attempts to provide a comprehensive review of the current status of T2SL detectors and discusses origins of T2SL device performance degradation, in particular, surface and bulk dark-current components.
Various approaches of dark current reduction with their pros and cons are presented.
American Psychological Association (APA)
Plis, Elena A.. 2014. InAsGaSb Type-II Superlattice Detectors. Advances in Electronics،Vol. 2014, no. 2014, pp.1-12.
https://search.emarefa.net/detail/BIM-457022
Modern Language Association (MLA)
Plis, Elena A.. InAsGaSb Type-II Superlattice Detectors. Advances in Electronics No. 2014 (2014), pp.1-12.
https://search.emarefa.net/detail/BIM-457022
American Medical Association (AMA)
Plis, Elena A.. InAsGaSb Type-II Superlattice Detectors. Advances in Electronics. 2014. Vol. 2014, no. 2014, pp.1-12.
https://search.emarefa.net/detail/BIM-457022
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-457022