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Fabrication of Lateral Polysilicon Gap of Less than 50 nm Using Conventional Lithography
Joint Authors
Hashim, U.
Nazwa, T.
Ali, M. E.
Dhahi, Th. S.
Ahmed, N. M.
Source
Issue
Vol. 2011, Issue 2011 (31 Dec. 2011), pp.1-8, 8 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2011-05-29
Country of Publication
Egypt
No. of Pages
8
Main Subjects
Engineering Sciences and Information Technology
Chemistry
Civil Engineering
Abstract EN
We report a thermal oxidation process for the fabrication of nanogaps of less than 50 nm in dimension.
Nanogaps of this dimension are necessary to eliminate contributions from double-layer capacitance in the dielectric detection of protein or nucleic acid.
The method combines conventional photolithography and pattern-size reduction techniques.
The gaps are fabricated on polysilicon-coated silicon substrate with gold electrodes.
The dimensions of the structure are determined by scanning electron microscopy (SEM).
An electrical characterization of the structures by dielectric analyzer (DA) shows an improved conductivity as well as enhanced permittivity and capacity with the reduction of gap size, suggesting its potential applications in the detection of biomolecule with very low level of power supply.
Two chrome Masks are used to complete the work: the first Mask is for the nanogap pattern and the second one is for the electrodes.
An improved resolution of pattern size is obtained by controlling the oxidation time.
The method expected to enable fabrication of nanogaps with a wide ranging designs and dimensions on different substrates.
It is a simple and cost-effective method and does not require complicated nanolithography process for fabricating desired nanogaps in a reproducible fashion.
American Psychological Association (APA)
Dhahi, Th. S.& Hashim, U.& Ali, M. E.& Ahmed, N. M.& Nazwa, T.. 2011. Fabrication of Lateral Polysilicon Gap of Less than 50 nm Using Conventional Lithography. Journal of Nanomaterials،Vol. 2011, no. 2011, pp.1-8.
https://search.emarefa.net/detail/BIM-457373
Modern Language Association (MLA)
Dhahi, Th. S.…[et al.]. Fabrication of Lateral Polysilicon Gap of Less than 50 nm Using Conventional Lithography. Journal of Nanomaterials No. 2011 (2011), pp.1-8.
https://search.emarefa.net/detail/BIM-457373
American Medical Association (AMA)
Dhahi, Th. S.& Hashim, U.& Ali, M. E.& Ahmed, N. M.& Nazwa, T.. Fabrication of Lateral Polysilicon Gap of Less than 50 nm Using Conventional Lithography. Journal of Nanomaterials. 2011. Vol. 2011, no. 2011, pp.1-8.
https://search.emarefa.net/detail/BIM-457373
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-457373