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From Coherent States in Adjacent Graphene Layers toward Low-Power Logic Circuits
Joint Authors
Reddy, Dharmendar
Register, Leonard F.
Basu, Dipanjan
Source
Advances in Condensed Matter Physics
Issue
Vol. 2011, Issue 2011 (31 Dec. 2011), pp.1-8, 8 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2010-10-14
Country of Publication
Egypt
No. of Pages
8
Main Subjects
Abstract EN
Colleagues and we recently proposed a new type of transistor, a Bilayer PseudoSpin Field Effect Transistor (BiSFET), based on many-body coherent states in coupled electron and hole layers in graphene.
Here we review the basic BiSFET device concept and ongoing efforts to determine how such a device, which would be far from a drop-in replacement for MOSFETs in CMOS logic, could be used for low-power logic operation, and to model the effects of engineerable device parameters on the formation and gating of interlayer coherent state.
American Psychological Association (APA)
Register, Leonard F.& Basu, Dipanjan& Reddy, Dharmendar. 2010. From Coherent States in Adjacent Graphene Layers toward Low-Power Logic Circuits. Advances in Condensed Matter Physics،Vol. 2011, no. 2011, pp.1-8.
https://search.emarefa.net/detail/BIM-458121
Modern Language Association (MLA)
Register, Leonard F.…[et al.]. From Coherent States in Adjacent Graphene Layers toward Low-Power Logic Circuits. Advances in Condensed Matter Physics No. 2011 (2011), pp.1-8.
https://search.emarefa.net/detail/BIM-458121
American Medical Association (AMA)
Register, Leonard F.& Basu, Dipanjan& Reddy, Dharmendar. From Coherent States in Adjacent Graphene Layers toward Low-Power Logic Circuits. Advances in Condensed Matter Physics. 2010. Vol. 2011, no. 2011, pp.1-8.
https://search.emarefa.net/detail/BIM-458121
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-458121