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Diverse Role of Silicon Carbide in the Domain of Nanomaterials
Joint Authors
Ganguly, T.
Pradhan, Swapan Kumar
Sahu, T.
Ghosh, B.
Source
International Journal of Electrochemistry
Issue
Vol. 2012, Issue 2012 (31 Dec. 2012), pp.1-7, 7 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2012-08-07
Country of Publication
Egypt
No. of Pages
7
Main Subjects
Abstract EN
Silicon carbide (SiC) is a promising material due to its unique property to adopt different crystalline polytypes which monitor the band gap and the electronic and optical properties.
Despite being an indirect band gap semiconductor, SiC is used in several high-performance electronic and optical devices.
SiC has been long recognized as one of the best biocompatible materials, especially in cardiovascular and blood-contacting implants and biomedical devices.
In this paper, diverse role of SiC in its nanostructured form has been discussed.
It is felt that further experimental and theoretical work would help to better understanding of the various properties of these nanostructures in order to realize their full potentials.
American Psychological Association (APA)
Sahu, T.& Ghosh, B.& Pradhan, Swapan Kumar& Ganguly, T.. 2012. Diverse Role of Silicon Carbide in the Domain of Nanomaterials. International Journal of Electrochemistry،Vol. 2012, no. 2012, pp.1-7.
https://search.emarefa.net/detail/BIM-459177
Modern Language Association (MLA)
Sahu, T.…[et al.]. Diverse Role of Silicon Carbide in the Domain of Nanomaterials. International Journal of Electrochemistry No. 2012 (2012), pp.1-7.
https://search.emarefa.net/detail/BIM-459177
American Medical Association (AMA)
Sahu, T.& Ghosh, B.& Pradhan, Swapan Kumar& Ganguly, T.. Diverse Role of Silicon Carbide in the Domain of Nanomaterials. International Journal of Electrochemistry. 2012. Vol. 2012, no. 2012, pp.1-7.
https://search.emarefa.net/detail/BIM-459177
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-459177