Preparation of Single- and Few-Layer Graphene Sheets Using Co Deposition on SiC Substrate
Joint Authors
Li, Cun
Yang, Jingjing
Yuan, Wenxia
Zeng, Xiaopeng
Li, Dandan
Source
Issue
Vol. 2011, Issue 2011 (31 Dec. 2011), pp.1-7, 7 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2011-08-10
Country of Publication
Egypt
No. of Pages
7
Main Subjects
Engineering Sciences and Information Technology
Chemistry
Civil Engineering
Abstract EN
Single- and few-layer graphene sheets were fabricated by selective chemical reactions between Co film and SiC substrate.
A rapid cooling process was employed.
The number of layers and crystallinity of graphene sheets were controlled by process parameters.
The formation mechanism of graphene was highly sensitive to carbon diffusion.
Free carbon precipitated and then moved across the product layer that was composed mainly of cobalt-silicides.
The graphene layer formed homogeneously on the surface and then transferred to the other substrate.
This could provide a method for high-quality fabrication of wafer-sized graphene sheets.
American Psychological Association (APA)
Li, Cun& Li, Dandan& Yang, Jingjing& Zeng, Xiaopeng& Yuan, Wenxia. 2011. Preparation of Single- and Few-Layer Graphene Sheets Using Co Deposition on SiC Substrate. Journal of Nanomaterials،Vol. 2011, no. 2011, pp.1-7.
https://search.emarefa.net/detail/BIM-463202
Modern Language Association (MLA)
Li, Cun…[et al.]. Preparation of Single- and Few-Layer Graphene Sheets Using Co Deposition on SiC Substrate. Journal of Nanomaterials No. 2011 (2011), pp.1-7.
https://search.emarefa.net/detail/BIM-463202
American Medical Association (AMA)
Li, Cun& Li, Dandan& Yang, Jingjing& Zeng, Xiaopeng& Yuan, Wenxia. Preparation of Single- and Few-Layer Graphene Sheets Using Co Deposition on SiC Substrate. Journal of Nanomaterials. 2011. Vol. 2011, no. 2011, pp.1-7.
https://search.emarefa.net/detail/BIM-463202
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-463202
