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Bipolar Resistive Switching Characteristic of Epitaxial NiO Thin Film on Nb-Doped SrTiO3 Substrate
Joint Authors
Source
Advances in Condensed Matter Physics
Issue
Vol. 2012, Issue 2012 (31 Dec. 2012), pp.1-8, 8 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2012-09-04
Country of Publication
Egypt
No. of Pages
8
Main Subjects
Abstract EN
Epitaxial NiO film was grown on 0.7% Nb-doped SrTiO3 substrates by pulsed laser deposition.
The I-V characteristics of Ag/NiO/Nb-SrTiO3/In device show reproducible and pronounced bipolar resistive switching without forming process which was induced by the NiO/Nb-SrTiO3 junctions, and the resistive switching ratio RHRS/RLRS can reach 103 at the read voltage of −0.5 V.
Furthermore, the resistance states can be controlled by changing the max forward voltage, reverse voltage, or compliance current, indicating multilevel memories.
These results were discussed by considering the role of carrier injection trapped/detrapped at the interfacial depletion region of the heterojunction.
American Psychological Association (APA)
Zhu, Yongdan& Li, Meiya. 2012. Bipolar Resistive Switching Characteristic of Epitaxial NiO Thin Film on Nb-Doped SrTiO3 Substrate. Advances in Condensed Matter Physics،Vol. 2012, no. 2012, pp.1-8.
https://search.emarefa.net/detail/BIM-466148
Modern Language Association (MLA)
Zhu, Yongdan& Li, Meiya. Bipolar Resistive Switching Characteristic of Epitaxial NiO Thin Film on Nb-Doped SrTiO3 Substrate. Advances in Condensed Matter Physics No. 2012 (2012), pp.1-8.
https://search.emarefa.net/detail/BIM-466148
American Medical Association (AMA)
Zhu, Yongdan& Li, Meiya. Bipolar Resistive Switching Characteristic of Epitaxial NiO Thin Film on Nb-Doped SrTiO3 Substrate. Advances in Condensed Matter Physics. 2012. Vol. 2012, no. 2012, pp.1-8.
https://search.emarefa.net/detail/BIM-466148
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-466148