Electrical Properties of Amorphous Titanium Oxide Thin Films for Bolometric Application

Abstract EN

We report the electrical conduction mechanism of amorphous titanium oxide thin films applied for bolometers.

As the O/Ti ratio varies from 1.73 to 1.97 measured by rutherford backscattering spectroscopy, the resistivity of the films increases from 0.26 Ω cm to 10.1 Ω cm.

At the same time, the temperature coefficient of resistivity and activation energy vary from −1.2% to −2.3% and from 0.09 eV to 0.18 eV, respectively.

The temperature dependence of the electrical conductivity illustrates a thermally activated conduction behavior and the carrier transport mechanism in the titanium oxide thin films is found to obey the normal Meyer-Neldel Rule in the temperature range from 293 K to 373 K.