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Electrical and Optical Properties of GexSi1−x : H Thin Films Prepared by Thermal Evaporation Method
Joint Authors
al-Douri, A. A. J.
Makadsi, M. N.
Alias, Maysoon F. A.
Alnajjar, Abdalla A.
Source
Advances in Condensed Matter Physics
Issue
Vol. 2010, Issue 2010 (31 Dec. 2010), pp.1-8, 8 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2010-04-27
Country of Publication
Egypt
No. of Pages
8
Main Subjects
Abstract EN
Thin a-GexSi1−x:H films were grown successfully by fabrication of designated ingot followed by evaporation onto glass slides.
A range of growth conditions, Ge contents, dopant concentration (Al and As), and substrate temperature, were employed.
Stoichiometry of the thin films composition was confirmed using standard surface techniques.
The structure of all films was amorphous.
Film composition and deposition parameters were investigated for their bearing on film electrical and optical properties.
More than one transport mechanism is indicated.
It was observed that increasing substrate temperature, Ge contents, and dopant concentration lead to a decrease in the optical energy gap of those films.
The role of the deposition conditions on values of the optical constants was determined.
Accordingly, models of the density of states for the Ge0.5Si0.5:H thin films as pure, doped with 3.5% of Al (p-type) and that doped with 3.5% As (n-type), were proposed.
American Psychological Association (APA)
al-Douri, A. A. J.& Alias, Maysoon F. A.& Alnajjar, Abdalla A.& Makadsi, M. N.. 2010. Electrical and Optical Properties of GexSi1−x : H Thin Films Prepared by Thermal Evaporation Method. Advances in Condensed Matter Physics،Vol. 2010, no. 2010, pp.1-8.
https://search.emarefa.net/detail/BIM-471510
Modern Language Association (MLA)
al-Douri, A. A. J.…[et al.]. Electrical and Optical Properties of GexSi1−x : H Thin Films Prepared by Thermal Evaporation Method. Advances in Condensed Matter Physics No. 2010 (2010), pp.1-8.
https://search.emarefa.net/detail/BIM-471510
American Medical Association (AMA)
al-Douri, A. A. J.& Alias, Maysoon F. A.& Alnajjar, Abdalla A.& Makadsi, M. N.. Electrical and Optical Properties of GexSi1−x : H Thin Films Prepared by Thermal Evaporation Method. Advances in Condensed Matter Physics. 2010. Vol. 2010, no. 2010, pp.1-8.
https://search.emarefa.net/detail/BIM-471510
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-471510