Scalable RFCMOS Model for 90 nm Technology
Joint Authors
Sia, Choon Beng
Yeo, Kiat Seng
Tong, Ah Fatt
Yang, Wanlan
Lim, Wei Meng
Yu, Xiaopeng
Source
International Journal of Microwave Science and Technology
Issue
Vol. 2011, Issue 2011 (31 Dec. 2011), pp.1-16, 16 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2011-12-21
Country of Publication
Egypt
No. of Pages
16
Main Subjects
Abstract EN
This paper presents the formation of the parasitic components that exist in the RF MOSFET structure during its high-frequency operation.
The parasitic components are extracted from the transistor's S-parameter measurement, and its geometry dependence is studied with respect to its layout structure.
Physical geometry equations are proposed to represent these parasitic components, and by implementing them into the RF model, a scalable RFCMOS model, that is, valid up to 49.85 GHz is demonstrated.
A new verification technique is proposed to verify the quality of the developed scalable RFCMOS model.
The proposed technique can shorten the verification time of the scalable RFCMOS model and ensure that the coded scalable model file is error-free and thus more reliable to use.
American Psychological Association (APA)
Tong, Ah Fatt& Lim, Wei Meng& Sia, Choon Beng& Yu, Xiaopeng& Yang, Wanlan& Yeo, Kiat Seng. 2011. Scalable RFCMOS Model for 90 nm Technology. International Journal of Microwave Science and Technology،Vol. 2011, no. 2011, pp.1-16.
https://search.emarefa.net/detail/BIM-472699
Modern Language Association (MLA)
Tong, Ah Fatt…[et al.]. Scalable RFCMOS Model for 90 nm Technology. International Journal of Microwave Science and Technology No. 2011 (2011), pp.1-16.
https://search.emarefa.net/detail/BIM-472699
American Medical Association (AMA)
Tong, Ah Fatt& Lim, Wei Meng& Sia, Choon Beng& Yu, Xiaopeng& Yang, Wanlan& Yeo, Kiat Seng. Scalable RFCMOS Model for 90 nm Technology. International Journal of Microwave Science and Technology. 2011. Vol. 2011, no. 2011, pp.1-16.
https://search.emarefa.net/detail/BIM-472699
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-472699