GaN-Based High-k Praseodymium Oxide Gate MISFETs with P2S5(NH4)2SX + UV Interface Treatment Technology
Joint Authors
Source
Active and Passive Electronic Components
Issue
Vol. 2012, Issue 2012 (31 Dec. 2012), pp.1-10, 10 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2012-12-03
Country of Publication
Egypt
No. of Pages
10
Main Subjects
Abstract EN
This study examines the praseodymium-oxide- (Pr2O3-) passivated AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) with high dielectric constant in which the AlGaN Schottky layers are treated with P2S5/(NH4)2SX + ultraviolet (UV) illumination.
An electron-beam evaporated Pr2O3 insulator is used instead of traditional plasma-assisted chemical vapor deposition (PECVD), in order to prevent plasma-induced damage to the AlGaN.
In this work, the HEMTs are pretreated with P2S5/(NH4)2SX solution and UV illumination before the gate insulator (Pr2O3) is deposited.
Since stable sulfur that is bound to the Ga species can be obtained easily and surface oxygen atoms are reduced by the P2S5/(NH4)2SX pretreatment, the lowest leakage current is observed in MIS-HEMT.
Additionally, a low flicker noise and a low surface roughness (0.38 nm) are also obtained using this novel process, which demonstrates its ability to reduce the surface states.
Low gate leakage current Pr2O3 and high-k AlGaN/GaN MIS-HEMTs, with P2S5/(NH4)2SX + UV illumination treatment, are suited to low-noise applications, because of the electron-beam-evaporated insulator and the new chemical pretreatment.
American Psychological Association (APA)
Lin, Chao-Wei& Chiu, Hsien-Chin. 2012. GaN-Based High-k Praseodymium Oxide Gate MISFETs with P2S5(NH4)2SX + UV Interface Treatment Technology. Active and Passive Electronic Components،Vol. 2012, no. 2012, pp.1-10.
https://search.emarefa.net/detail/BIM-473175
Modern Language Association (MLA)
Lin, Chao-Wei& Chiu, Hsien-Chin. GaN-Based High-k Praseodymium Oxide Gate MISFETs with P2S5(NH4)2SX + UV Interface Treatment Technology. Active and Passive Electronic Components No. 2012 (2012), pp.1-10.
https://search.emarefa.net/detail/BIM-473175
American Medical Association (AMA)
Lin, Chao-Wei& Chiu, Hsien-Chin. GaN-Based High-k Praseodymium Oxide Gate MISFETs with P2S5(NH4)2SX + UV Interface Treatment Technology. Active and Passive Electronic Components. 2012. Vol. 2012, no. 2012, pp.1-10.
https://search.emarefa.net/detail/BIM-473175
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-473175