Optical Properties and Characterization of Prepared Sn-Doped PbSe Thin Film
Joint Authors
Source
Advances in Condensed Matter Physics
Issue
Vol. 2012, Issue 2012 (31 Dec. 2012), pp.1-4, 4 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2012-06-03
Country of Publication
Egypt
No. of Pages
4
Main Subjects
Abstract EN
Physical vapor deposition of tin-doped lead selenide (Sn/PbSe) thin films on SiO2 glass is described.
Interaction of high-energy Ar+ ions bombardment on the doped PbSe films is discussed by XRD analysis.
The improvement of optical band gap of Sn/PbSe films irradiated by different doses of irradiation was studied using transmission spectroscopy.
American Psychological Association (APA)
Khanlary, M. R.& Salavati, E.. 2012. Optical Properties and Characterization of Prepared Sn-Doped PbSe Thin Film. Advances in Condensed Matter Physics،Vol. 2012, no. 2012, pp.1-4.
https://search.emarefa.net/detail/BIM-483038
Modern Language Association (MLA)
Khanlary, M. R.& Salavati, E.. Optical Properties and Characterization of Prepared Sn-Doped PbSe Thin Film. Advances in Condensed Matter Physics No. 2012 (2012), pp.1-4.
https://search.emarefa.net/detail/BIM-483038
American Medical Association (AMA)
Khanlary, M. R.& Salavati, E.. Optical Properties and Characterization of Prepared Sn-Doped PbSe Thin Film. Advances in Condensed Matter Physics. 2012. Vol. 2012, no. 2012, pp.1-4.
https://search.emarefa.net/detail/BIM-483038
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-483038
