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Analogue Behavioral Modeling of GTO
Joint Authors
Ravelo, B.
Coyitangiye, L.-A.
Azzouz, Y.
Schneider, H.
Source
Issue
Vol. 2011, Issue 2011 (31 Dec. 2011), pp.1-11, 11 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2011-07-26
Country of Publication
Egypt
No. of Pages
11
Main Subjects
Abstract EN
An analog behavioral model of high power gate turn-off thyristor (GTO) is developed in this paper.
The fundamental methodology for the modeling of this power electronic circuit is based on the use of the realistic diode consideration of non-linear junctions.
This modeling technique enables to perform different simulations taking into account the turn-on and turn-off transient behaviors in real-time.
The equivalent circuits were simulated with analog software developed in our laboratory.
It was shown that the tested simple and compact model allows the generation of accurate physical characteristics of power thyristors under dynamic conditions.
The model understudy was validated with analog simulations based on operational amplifier devices.
American Psychological Association (APA)
Azzouz, Y.& Schneider, H.& Coyitangiye, L.-A.& Ravelo, B.. 2011. Analogue Behavioral Modeling of GTO. Advances in Power Electronics،Vol. 2011, no. 2011, pp.1-11.
https://search.emarefa.net/detail/BIM-485921
Modern Language Association (MLA)
Azzouz, Y.…[et al.]. Analogue Behavioral Modeling of GTO. Advances in Power Electronics No. 2011 (2011), pp.1-11.
https://search.emarefa.net/detail/BIM-485921
American Medical Association (AMA)
Azzouz, Y.& Schneider, H.& Coyitangiye, L.-A.& Ravelo, B.. Analogue Behavioral Modeling of GTO. Advances in Power Electronics. 2011. Vol. 2011, no. 2011, pp.1-11.
https://search.emarefa.net/detail/BIM-485921
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-485921