Characterization of Defects and Stress in Polycrystalline Silicon Thin Films on Glass Substrates by Raman Microscopy
Joint Authors
Watanabe, Naoki
Bessyo, Takuro
Suzuki, Junki
Kitahara, Kuninori
Ishii, Toshitomo
Source
International Journal of Spectroscopy
Issue
Vol. 2011, Issue 2011 (31 Dec. 2011), pp.1-14, 14 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2011-10-09
Country of Publication
Egypt
No. of Pages
14
Main Subjects
Abstract EN
Raman microscopy was applied to characterize polycrystalline silicon (poly-Si) on glass substrates for application as thin-film transistors (TFTs) integrated on electronic display panels.
This study examines the crystallographic defects and stress in poly-Si films grown by industrial techniques: solid phase crystallization and excimer laser crystallization (ELC).
To distinguish the effects of defects and stress on the optical-phonon mode of the Si–Si bond, a semiempirical analysis was performed.
The analysis was compared with defect images obtained through electron microscopy and atomic force microscopy.
It was found that the Raman intensity for the ELC film is remarkably enhanced by the hillocks and ridges located around grain boundaries, which indicates that Raman spectra mainly reflect the situation around grain boundaries.
A combination of the hydrogenation of films and the observation of the Si-hydrogen local-vibration mode is useful to support the analysis on the defects.
Raman microscopy is also effective for detecting the plasma-induced damage suffered during device processing and characterizing the performance of Si layer in TFTs.
American Psychological Association (APA)
Kitahara, Kuninori& Ishii, Toshitomo& Suzuki, Junki& Bessyo, Takuro& Watanabe, Naoki. 2011. Characterization of Defects and Stress in Polycrystalline Silicon Thin Films on Glass Substrates by Raman Microscopy. International Journal of Spectroscopy،Vol. 2011, no. 2011, pp.1-14.
https://search.emarefa.net/detail/BIM-486725
Modern Language Association (MLA)
Kitahara, Kuninori…[et al.]. Characterization of Defects and Stress in Polycrystalline Silicon Thin Films on Glass Substrates by Raman Microscopy. International Journal of Spectroscopy No. 2011 (2011), pp.1-14.
https://search.emarefa.net/detail/BIM-486725
American Medical Association (AMA)
Kitahara, Kuninori& Ishii, Toshitomo& Suzuki, Junki& Bessyo, Takuro& Watanabe, Naoki. Characterization of Defects and Stress in Polycrystalline Silicon Thin Films on Glass Substrates by Raman Microscopy. International Journal of Spectroscopy. 2011. Vol. 2011, no. 2011, pp.1-14.
https://search.emarefa.net/detail/BIM-486725
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-486725