Stacking Fault Energy of Si Nanocrystals Embedded in SiO2
Joint Authors
Liang, W. S.
Wang, Y. Q.
Ross, G. G.
Source
Issue
Vol. 2011, Issue 2011 (31 Dec. 2011), pp.1-3, 3 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2011-05-25
Country of Publication
Egypt
No. of Pages
3
Main Subjects
Abstract EN
Si nanocrystals (Si nc) were produced by the implantation of Si+ into a SiO2 film on (100) Si, followed by high-temperature annealing.
High-resolution transmission electron microscopy (HRTEM) observation has shown that a perfect dislocation (Burgers vector b=(1/2)〈110〉) can dissociate into two Shockley partials (Burgers vector b=(1/6)〈112〉) bounding a strip of stacking faults (SFs).
The width of the SFs has been determined from the HRTEM image, and the stacking fault energy for Si nc has been calculated.
The stacking fault energy for Si nc is compared with that for bulk Si, and the formation probability of defects in Si nc is also discussed.
The results will shed a light on the dissociation of dislocations in nanoparticles.
American Psychological Association (APA)
Wang, Y. Q.& Liang, W. S.& Ross, G. G.. 2011. Stacking Fault Energy of Si Nanocrystals Embedded in SiO2. ISRN Nanotechnology،Vol. 2011, no. 2011, pp.1-3.
https://search.emarefa.net/detail/BIM-487362
Modern Language Association (MLA)
Wang, Y. Q.…[et al.]. Stacking Fault Energy of Si Nanocrystals Embedded in SiO2. ISRN Nanotechnology No. 2011 (2011), pp.1-3.
https://search.emarefa.net/detail/BIM-487362
American Medical Association (AMA)
Wang, Y. Q.& Liang, W. S.& Ross, G. G.. Stacking Fault Energy of Si Nanocrystals Embedded in SiO2. ISRN Nanotechnology. 2011. Vol. 2011, no. 2011, pp.1-3.
https://search.emarefa.net/detail/BIM-487362
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-487362
