A Unified Channel Charges Expression for Analytic MOSFET Modeling
Joint Authors
Source
Active and Passive Electronic Components
Issue
Vol. 2012, Issue 2012 (31 Dec. 2012), pp.1-12, 12 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2012-12-25
Country of Publication
Egypt
No. of Pages
12
Main Subjects
Abstract EN
Based on a 1D Poissons equation resolution, we present an analytic model of inversion charges allowing calculation of the drain current and transconductance in the Metal Oxide Semiconductor Field Effect Transistor.
The drain current and transconductance are described by analytical functions including mobility corrections and short channel effects (CLM, DIBL).
The comparison with the Pao-Sah integral shows excellent accuracy of the model in all inversion modes from strong to weak inversion in submicronics MOSFET.
All calculations are encoded with a simple C program and give instantaneous results that provide an efficient tool for microelectronics users.
American Psychological Association (APA)
Murray, Hugues& Martin, Patrick. 2012. A Unified Channel Charges Expression for Analytic MOSFET Modeling. Active and Passive Electronic Components،Vol. 2012, no. 2012, pp.1-12.
https://search.emarefa.net/detail/BIM-488435
Modern Language Association (MLA)
Murray, Hugues& Martin, Patrick. A Unified Channel Charges Expression for Analytic MOSFET Modeling. Active and Passive Electronic Components No. 2012 (2012), pp.1-12.
https://search.emarefa.net/detail/BIM-488435
American Medical Association (AMA)
Murray, Hugues& Martin, Patrick. A Unified Channel Charges Expression for Analytic MOSFET Modeling. Active and Passive Electronic Components. 2012. Vol. 2012, no. 2012, pp.1-12.
https://search.emarefa.net/detail/BIM-488435
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-488435