Reduced Turn-On Voltage for npn Graded-Base AlGaNGaN Heterojunction Bipolar Transistors by Thermal Treatment

Joint Authors

Tan, Shih-Wei
Lai, Shih-Wen

Source

Advances in Materials Science and Engineering

Issue

Vol. 2012, Issue 2012 (31 Dec. 2012), pp.1-5, 5 p.

Publisher

Hindawi Publishing Corporation

Publication Date

2012-05-07

Country of Publication

Egypt

No. of Pages

5

Main Subjects

Engineering Sciences and Information Technology

Abstract EN

A thermal treatment was employed to improve the DC performances of npn graded-base AlGaN/GaN heterojunction bipolar transistors (HBTs).

Such HBTs without the thermal treatment exhibit a higher turn-on voltage of 6.45 V, a lower current gain of 0.84, and a lower collector current of 3.18 × 10-4 mA at VBE of 4.5 V.

The HBTs are examined by thermal treatment with rapid thermal process (RTP) annealing at various times and various temperatures.

Experimental results reveal that the HBTs with the thermal treatment exhibit a lowest turn-on voltage of 3.90 V, a highest current gain of 9.55, and highest collector current of 112.2 mA at VBE of 4.5 V.

The thermal treatment brings forth the most remarkable improvements for the HBTs when the base parasitical Schottky diodes are modified.

American Psychological Association (APA)

Tan, Shih-Wei& Lai, Shih-Wen. 2012. Reduced Turn-On Voltage for npn Graded-Base AlGaNGaN Heterojunction Bipolar Transistors by Thermal Treatment. Advances in Materials Science and Engineering،Vol. 2012, no. 2012, pp.1-5.
https://search.emarefa.net/detail/BIM-488655

Modern Language Association (MLA)

Tan, Shih-Wei& Lai, Shih-Wen. Reduced Turn-On Voltage for npn Graded-Base AlGaNGaN Heterojunction Bipolar Transistors by Thermal Treatment. Advances in Materials Science and Engineering No. 2012 (2012), pp.1-5.
https://search.emarefa.net/detail/BIM-488655

American Medical Association (AMA)

Tan, Shih-Wei& Lai, Shih-Wen. Reduced Turn-On Voltage for npn Graded-Base AlGaNGaN Heterojunction Bipolar Transistors by Thermal Treatment. Advances in Materials Science and Engineering. 2012. Vol. 2012, no. 2012, pp.1-5.
https://search.emarefa.net/detail/BIM-488655

Data Type

Journal Articles

Language

English

Notes

Includes bibliographical references

Record ID

BIM-488655