Reduced Turn-On Voltage for npn Graded-Base AlGaNGaN Heterojunction Bipolar Transistors by Thermal Treatment
Joint Authors
Source
Advances in Materials Science and Engineering
Issue
Vol. 2012, Issue 2012 (31 Dec. 2012), pp.1-5, 5 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2012-05-07
Country of Publication
Egypt
No. of Pages
5
Main Subjects
Engineering Sciences and Information Technology
Abstract EN
A thermal treatment was employed to improve the DC performances of npn graded-base AlGaN/GaN heterojunction bipolar transistors (HBTs).
Such HBTs without the thermal treatment exhibit a higher turn-on voltage of 6.45 V, a lower current gain of 0.84, and a lower collector current of 3.18 × 10-4 mA at VBE of 4.5 V.
The HBTs are examined by thermal treatment with rapid thermal process (RTP) annealing at various times and various temperatures.
Experimental results reveal that the HBTs with the thermal treatment exhibit a lowest turn-on voltage of 3.90 V, a highest current gain of 9.55, and highest collector current of 112.2 mA at VBE of 4.5 V.
The thermal treatment brings forth the most remarkable improvements for the HBTs when the base parasitical Schottky diodes are modified.
American Psychological Association (APA)
Tan, Shih-Wei& Lai, Shih-Wen. 2012. Reduced Turn-On Voltage for npn Graded-Base AlGaNGaN Heterojunction Bipolar Transistors by Thermal Treatment. Advances in Materials Science and Engineering،Vol. 2012, no. 2012, pp.1-5.
https://search.emarefa.net/detail/BIM-488655
Modern Language Association (MLA)
Tan, Shih-Wei& Lai, Shih-Wen. Reduced Turn-On Voltage for npn Graded-Base AlGaNGaN Heterojunction Bipolar Transistors by Thermal Treatment. Advances in Materials Science and Engineering No. 2012 (2012), pp.1-5.
https://search.emarefa.net/detail/BIM-488655
American Medical Association (AMA)
Tan, Shih-Wei& Lai, Shih-Wen. Reduced Turn-On Voltage for npn Graded-Base AlGaNGaN Heterojunction Bipolar Transistors by Thermal Treatment. Advances in Materials Science and Engineering. 2012. Vol. 2012, no. 2012, pp.1-5.
https://search.emarefa.net/detail/BIM-488655
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-488655