High-Efficiency Si Solar Cell Fabricated by Ion Implantation and Inline Backside Rounding Process

Abstract EN

We introduce a novel, high-throughput processing method to produce high-efficiency solar cells via a backside rounding process and ion implantation.

Ion implantation combined with a backside rounding process is investigated.

The ion implantation process substituted for thermal POCl3 diffusion performs better Rsheet uniformity (<3%).

The U-4100 spectrophotometer shows that wafers with backside rounding process perform higher reflectivity at long wavelengths.

Industrial screen printed (SP) Al-BSF on different etching depth groups was analyzed.

SEMs show that increasing etch depth improves back surface field (BSF).

The I-V measurement revealed that etching depths of 6 μm ± 0.1 μm due to having the highest VOC and ISC, it has the best performance.

SEMs also show that higher etching depths also produce uniform Al melting and better BSF.

This is in agreement with IQE response data at long wavelengths.