Improved Switching Characteristics of Fast Power MOSFETs Applying Solder Bump Technology

Abstract EN

The impact of a reduced package stray inductance on the switching performance of fast power MOSFETs is discussed applying advanced 3D packaging technologies.

Starting from an overview over new packaging approaches, a solder bump technology using a flexible PI substrate is exemplarily chosen for the evaluation.

Measurement techniques to determine the stray inductance are discussed and compared with a numerical solution based on the PEEC method.

Experimental results show the improvement of the voltage utilization while there is only a slight impact on total switching losses.