Electrical properties of Ba,Ho Doped PbI2

Abstract EN

Barium and Holmium have been introduced into polycrystalline lead iodide during solution growth of thin films.

Electrical characterization (current vs.

voltage measurements, resistivity, carrier concentration and mobilities as a function of the doping concentrations) clearly demonstrates that both dopants introduce donor level in the PbI2 band gap and compensate for the native acceptor defects of lead iodide, Barium as a dopant having the greater influence.