A 12 dB 0.7 V 850 μW CMOS LNA for 866 MHz UHF RFID Reader

Abstract EN

The design of a narrow-band cascode CMOS inductive source-degenerated low noise amplifier (LNA) for 866 MHz UHF RFID reader is presented.

Compared to other previously reported narrow-band LNA designs, in this paper the finite gds (=1/r0) effect has been considered to improve the nanometric design, achieving simultaneous impedance and minimum Fmin noise matching at a very low power drain of 850 μW from a 0.7 V supply voltage.

The LNA was fabricated using the IBM 130 nm CMOS process delivering a forward power gain (S21) of ≈12 dB, a reverse isolation (S12) of ≈−34 dB, an output power reflection (S22 @866 MHz) of ≈−25 dB, and an input power reflection (S11 @866 MHz) of ≈−12 dB.

It had a minimum pass-band NF of around 2.2 dB and a third-order input referred intercept point (IIP3) of ≈−11.5 dBm.