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A 12 dB 0.7 V 850 μW CMOS LNA for 866 MHz UHF RFID Reader
Joint Authors
Source
Active and Passive Electronic Components
Issue
Vol. 2010, Issue 2010 (31 Dec. 2010), pp.1-5, 5 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2010-06-27
Country of Publication
Egypt
No. of Pages
5
Main Subjects
Abstract EN
The design of a narrow-band cascode CMOS inductive source-degenerated low noise amplifier (LNA) for 866 MHz UHF RFID reader is presented.
Compared to other previously reported narrow-band LNA designs, in this paper the finite gds (=1/r0) effect has been considered to improve the nanometric design, achieving simultaneous impedance and minimum Fmin noise matching at a very low power drain of 850 μW from a 0.7 V supply voltage.
The LNA was fabricated using the IBM 130 nm CMOS process delivering a forward power gain (S21) of ≈12 dB, a reverse isolation (S12) of ≈−34 dB, an output power reflection (S22 @866 MHz) of ≈−25 dB, and an input power reflection (S11 @866 MHz) of ≈−12 dB.
It had a minimum pass-band NF of around 2.2 dB and a third-order input referred intercept point (IIP3) of ≈−11.5 dBm.
American Psychological Association (APA)
Li, Jie& Hasan, S. M. Rezaul. 2010. A 12 dB 0.7 V 850 μW CMOS LNA for 866 MHz UHF RFID Reader. Active and Passive Electronic Components،Vol. 2010, no. 2010, pp.1-5.
https://search.emarefa.net/detail/BIM-491754
Modern Language Association (MLA)
Li, Jie& Hasan, S. M. Rezaul. A 12 dB 0.7 V 850 μW CMOS LNA for 866 MHz UHF RFID Reader. Active and Passive Electronic Components No. 2010 (2010), pp.1-5.
https://search.emarefa.net/detail/BIM-491754
American Medical Association (AMA)
Li, Jie& Hasan, S. M. Rezaul. A 12 dB 0.7 V 850 μW CMOS LNA for 866 MHz UHF RFID Reader. Active and Passive Electronic Components. 2010. Vol. 2010, no. 2010, pp.1-5.
https://search.emarefa.net/detail/BIM-491754
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-491754