Comparison of the Strength of Binary Dislocation Junctions in fcc Crystals
Joint Authors
Verdhan, Naisheel
Kapoor, Rajeev
Source
Indian Journal of Materials Science
Issue
Vol. 2014, Issue 2014 (31 Dec. 2014), pp.1-5, 5 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2014-01-09
Country of Publication
Egypt
No. of Pages
5
Main Subjects
Abstract EN
Discrete dislocation dynamics were used to determine the relative strengths of binary dislocation junctions in fcc crystals.
Equilibrium junctions of different types Lomer, glissile, coplanar, and collinear were formed by allowing parallel dislocations of unequal length to react.
The strengths were determined from the computed minimum strain rate versus the applied shear stress plots.
The collinear configuration was found to be the strongest and coplanar the weakest.
It was seen that the glissile junction could exist as two variants depending on which parent slip system the shear stress is applied.
One variant of the glissile junction was found to be as strong as the collinear configuration.
American Psychological Association (APA)
Verdhan, Naisheel& Kapoor, Rajeev. 2014. Comparison of the Strength of Binary Dislocation Junctions in fcc Crystals. Indian Journal of Materials Science،Vol. 2014, no. 2014, pp.1-5.
https://search.emarefa.net/detail/BIM-492797
Modern Language Association (MLA)
Verdhan, Naisheel& Kapoor, Rajeev. Comparison of the Strength of Binary Dislocation Junctions in fcc Crystals. Indian Journal of Materials Science No. 2014 (2014), pp.1-5.
https://search.emarefa.net/detail/BIM-492797
American Medical Association (AMA)
Verdhan, Naisheel& Kapoor, Rajeev. Comparison of the Strength of Binary Dislocation Junctions in fcc Crystals. Indian Journal of Materials Science. 2014. Vol. 2014, no. 2014, pp.1-5.
https://search.emarefa.net/detail/BIM-492797
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-492797