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Impact of the Gate Width of Al0.27Ga0.73NAlNAl0.04Ga0.96NGaN HEMT on Its Characteristics
Joint Authors
Wang, Qingna
Jin, Liwei
Cheng, Zhiqun
Source
International Journal of Antennas and Propagation
Issue
Vol. 2013, Issue 2013 (31 Dec. 2013), pp.1-3, 3 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2013-05-13
Country of Publication
Egypt
No. of Pages
3
Main Subjects
Abstract EN
This paper presents impact of layout sizes of Al0.27Ga0.73N/AlN/Al0.04Ga0.96N/GaN HEMT heterostructure high-mobility transistors (HEMTs) on SiC substrate on its characteristics that include the threshold voltage, the maximum transconductance, characteristic frequency, and the maximum oscillation frequency.
The changing parameters include the gate finger number, the gate width per finger.
The measurement results based on common-source devices demonstrate that the above parameters have different effects on the threshold voltage, maximum transconductance, and frequency characteristics.
American Psychological Association (APA)
Jin, Liwei& Cheng, Zhiqun& Wang, Qingna. 2013. Impact of the Gate Width of Al0.27Ga0.73NAlNAl0.04Ga0.96NGaN HEMT on Its Characteristics. International Journal of Antennas and Propagation،Vol. 2013, no. 2013, pp.1-3.
https://search.emarefa.net/detail/BIM-494795
Modern Language Association (MLA)
Jin, Liwei…[et al.]. Impact of the Gate Width of Al0.27Ga0.73NAlNAl0.04Ga0.96NGaN HEMT on Its Characteristics. International Journal of Antennas and Propagation No. 2013 (2013), pp.1-3.
https://search.emarefa.net/detail/BIM-494795
American Medical Association (AMA)
Jin, Liwei& Cheng, Zhiqun& Wang, Qingna. Impact of the Gate Width of Al0.27Ga0.73NAlNAl0.04Ga0.96NGaN HEMT on Its Characteristics. International Journal of Antennas and Propagation. 2013. Vol. 2013, no. 2013, pp.1-3.
https://search.emarefa.net/detail/BIM-494795
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-494795