Low-Resistivity p-Type Doping in Wurtzite ZnS Using Codoping Method
Joint Authors
Li, Deng-feng
Wu, Cheng-Bing
Deng, Bo
Li, Bo-Lin
Dong, Hui-Ning
Luo, Ming
Source
Advances in Condensed Matter Physics
Issue
Vol. 2013, Issue 2013 (31 Dec. 2013), pp.1-4, 4 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2013-08-19
Country of Publication
Egypt
No. of Pages
4
Main Subjects
Abstract EN
By using first principles calculations, we propose a codoping method of using acceptors and donors simultaneously to realize low-resistivity and high carrier concentration p-type ZnS with wurtzite structure.
The ionization energy of single NS can be lowered by introducing the IIIZn-NS (III = Al, Ga, In) passivation system.
Codoping method in ZnS (2N, III) has lower formation energy comparing with single doping of N since III elements act as reactive codopants.
American Psychological Association (APA)
Li, Deng-feng& Luo, Ming& Li, Bo-Lin& Wu, Cheng-Bing& Deng, Bo& Dong, Hui-Ning. 2013. Low-Resistivity p-Type Doping in Wurtzite ZnS Using Codoping Method. Advances in Condensed Matter Physics،Vol. 2013, no. 2013, pp.1-4.
https://search.emarefa.net/detail/BIM-494821
Modern Language Association (MLA)
Li, Deng-feng…[et al.]. Low-Resistivity p-Type Doping in Wurtzite ZnS Using Codoping Method. Advances in Condensed Matter Physics No. 2013 (2013), pp.1-4.
https://search.emarefa.net/detail/BIM-494821
American Medical Association (AMA)
Li, Deng-feng& Luo, Ming& Li, Bo-Lin& Wu, Cheng-Bing& Deng, Bo& Dong, Hui-Ning. Low-Resistivity p-Type Doping in Wurtzite ZnS Using Codoping Method. Advances in Condensed Matter Physics. 2013. Vol. 2013, no. 2013, pp.1-4.
https://search.emarefa.net/detail/BIM-494821
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-494821