High-Quality Growth of GaInNAs for Application to Near-Infrared Laser Diodes
Joint Authors
Ishikawa, Fumitaro
Kondow, Masahiko
Source
Advances in Optical Technologies
Issue
Vol. 2012, Issue 2012 (31 Dec. 2012), pp.1-11, 11 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2012-11-11
Country of Publication
Egypt
No. of Pages
11
Main Subjects
Engineering Sciences and Information Technology
Abstract EN
GaInNAs was proposed and created in 1995.
It can be grown pseudomorphically on a GaAs substrate and is a light-emitting material with a bandgap energy that corresponds to near infrared.
By combining GaInNAs with GaAs, an ideal band lineup for laser-diode application is achieved.
This paper presents the reproducible growth of high-quality GaInNAs by molecular beam epitaxy.
Examining the effect of nitrogen introduction and its correlation with impurity incorporation, we find that Al is unintentionally incorporated into the epitaxial layer even though the Al cell shutter is closed, followed by the concomitant incorporation of O and C.
A gas-phase-scattering model can explain this phenomenon, suggesting that a large amount of N2 gas causes the scattering of residual Al atoms with occasional collisions resulting in the atoms being directed toward the substrate.
Hence, the reduction of the sublimated Al beam during the growth period can suppress the incorporation of unintentional impurities, resulting in a highly pure epitaxial layer.
American Psychological Association (APA)
Kondow, Masahiko& Ishikawa, Fumitaro. 2012. High-Quality Growth of GaInNAs for Application to Near-Infrared Laser Diodes. Advances in Optical Technologies،Vol. 2012, no. 2012, pp.1-11.
https://search.emarefa.net/detail/BIM-496165
Modern Language Association (MLA)
Kondow, Masahiko& Ishikawa, Fumitaro. High-Quality Growth of GaInNAs for Application to Near-Infrared Laser Diodes. Advances in Optical Technologies No. 2012 (2012), pp.1-11.
https://search.emarefa.net/detail/BIM-496165
American Medical Association (AMA)
Kondow, Masahiko& Ishikawa, Fumitaro. High-Quality Growth of GaInNAs for Application to Near-Infrared Laser Diodes. Advances in Optical Technologies. 2012. Vol. 2012, no. 2012, pp.1-11.
https://search.emarefa.net/detail/BIM-496165
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-496165