Impedance Spectroscopic Study of p-i-n Type a-Si Solar Cell by Doping Variation of p-Type Layer

Abstract EN

We investigated p-i-n type amorphous silicon (a-Si) solar cell where the diborane flow rate of the p-type layer was varied and the solar cell was measured static/dynamic characteristics.

The p/i interface of the thin film amorphous silicon solar cells was studied in terms of the coordination number of boron atoms in the p layer.

p-type layer and p/i interface properties were obtained from the X-ray photoelectron spectroscopy (XPS) and impedance spectroscopy.

One of the solar cells shows open circuit voltage (Voc)=880 mV, short circuit current density (Jsc)=14.21 mA/cm2, fill factor (FF)=72.03%, and efficiency (η)=8.8% while the p-type layer was doped with 0.1%.

The impedance spectroscopic measurement showed that the diode ideality factor and built-in potential changed with change in diborane flow rate.