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Heteroepitaxial Growth of Ge Nanowires on Si Substrates
Joint Authors
Boninelli, Simona
Spinella, Corrado
Irrera, Alessia
Pecora, Emanuele Francesco
Priolo, Francesco
Artoni, Pietro
Source
International Journal of Photoenergy
Issue
Vol. 2012, Issue 2012 (31 Dec. 2012), pp.1-5, 5 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2012-02-27
Country of Publication
Egypt
No. of Pages
5
Main Subjects
Abstract EN
Electron beam evaporation has been used to prepare Ge nanowires (NWs) on top of (111) Si substrates.
Despite the non-UHV growth conditions, scanning and transmission electron microscopies demonstrate that NWs are single crystal with specific crystallographic growth directions ([111], [110], and [112]).
NWs are faceted, exhibiting the lower energy plans on the surface.
The faceting depends on the growth direction.
Moreover, the detrimental effects for Ge NWs growth of O atoms contamination are discussed.
Finally, we describe how a proper preparation of the Au catalyst is able to increase the Ge NW density by a factor of 4, while heteroepitaxy and faceting features are maintained.
American Psychological Association (APA)
Artoni, Pietro& Irrera, Alessia& Pecora, Emanuele Francesco& Boninelli, Simona& Spinella, Corrado& Priolo, Francesco. 2012. Heteroepitaxial Growth of Ge Nanowires on Si Substrates. International Journal of Photoenergy،Vol. 2012, no. 2012, pp.1-5.
https://search.emarefa.net/detail/BIM-497663
Modern Language Association (MLA)
Artoni, Pietro…[et al.]. Heteroepitaxial Growth of Ge Nanowires on Si Substrates. International Journal of Photoenergy No. 2012 (2012), pp.1-5.
https://search.emarefa.net/detail/BIM-497663
American Medical Association (AMA)
Artoni, Pietro& Irrera, Alessia& Pecora, Emanuele Francesco& Boninelli, Simona& Spinella, Corrado& Priolo, Francesco. Heteroepitaxial Growth of Ge Nanowires on Si Substrates. International Journal of Photoenergy. 2012. Vol. 2012, no. 2012, pp.1-5.
https://search.emarefa.net/detail/BIM-497663
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-497663