The effect of thermal oxidation time on the structure and influence on optical properties for porous silicon prepared by photo electrochemical etching

Abstract EN

The morphological properties of the freshly and oxidized porous silicon at oxidation time (60, 90) sec were studied.

A blue emission from PSi can be seen with eyes after thermal oxidation because the increasing of energy gab due to decreased silicon column (nano particles).

Pore size and shape of n-type wafers are estimate and correlated with optical properties before and after rapid thermal oxidation (RTO).