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Lateral Infrared Photovoltaic Effects in Ag-Doped ZnO Thin Films
Joint Authors
Sun, Wei
Zhao, Songqing
Zhao, Kun
Liu, Wenwei
Source
International Journal of Photoenergy
Issue
Vol. 2010, Issue 2010 (31 Dec. 2010), pp.1-4, 4 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2010-06-17
Country of Publication
Egypt
No. of Pages
4
Main Subjects
Abstract EN
A transient lateral photovoltaic effect has been observed in Ag-doped ZnO thin films.
Under the nonuniform irradiation of a 1064 nm pulsed laser, the photovoltaic response shows high sensitivity to the spot position on the film surface.
The highest photovoltaic responsivity of 27.1 mV mJ−1 was observed, with a decline time of ∼1.5 ns and a full width at half-maximum (FWHM) of ∼4 ns.
The photovoltaic position sensitivity can reach about 3.8 mV mJ−1 mm−1.
This paper demonstrates the potential of Ag-doped ZnO films in the position-sensitive infrared detection
American Psychological Association (APA)
Liu, Wenwei& Zhao, Songqing& Zhao, Kun& Sun, Wei. 2010. Lateral Infrared Photovoltaic Effects in Ag-Doped ZnO Thin Films. International Journal of Photoenergy،Vol. 2010, no. 2010, pp.1-4.
https://search.emarefa.net/detail/BIM-498578
Modern Language Association (MLA)
Liu, Wenwei…[et al.]. Lateral Infrared Photovoltaic Effects in Ag-Doped ZnO Thin Films. International Journal of Photoenergy No. 2010 (2010), pp.1-4.
https://search.emarefa.net/detail/BIM-498578
American Medical Association (AMA)
Liu, Wenwei& Zhao, Songqing& Zhao, Kun& Sun, Wei. Lateral Infrared Photovoltaic Effects in Ag-Doped ZnO Thin Films. International Journal of Photoenergy. 2010. Vol. 2010, no. 2010, pp.1-4.
https://search.emarefa.net/detail/BIM-498578
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-498578