Modeling of the Channel Thickness Influence on Electrical Characteristics and Series Resistance in Gate-Recessed Nanoscale SOI MOSFETs
Joint Authors
Chelly, Avraham
Karsenty, Avraham
Source
Active and Passive Electronic Components
Issue
Vol. 2013, Issue 2013 (31 Dec. 2013), pp.1-10, 10 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2013-06-02
Country of Publication
Egypt
No. of Pages
10
Main Subjects
Abstract EN
Ultrathin body (UTB) and nanoscale body (NSB) SOI-MOSFET devices, sharing a similar W/L but with a channel thickness of 46 nm and lower than 5 nm, respectively, were fabricated using a selective “gate-recessed” process on the same silicon wafer.
Their current-voltage characteristics measured at room temperature were found to be surprisingly different by several orders of magnitude.
We analyzed this result by considering the severe mobility degradation and the influence of a huge series resistance and found that the last one seems more coherent.
Then the electrical characteristics of the NSB can be analytically derived by integrating a gate voltage-dependent drain source series resistance.
In this paper, the influence of the channel thickness on the series resistance is reported for the first time.
This influence is integrated to the analytical model in order to describe the trends of the saturation current with the channel thickness.
This modeling approach may be useful to interpret anomalous electrical behavior of other nanodevices in which series resistance and/or mobility degradation is of a great concern.
American Psychological Association (APA)
Karsenty, Avraham& Chelly, Avraham. 2013. Modeling of the Channel Thickness Influence on Electrical Characteristics and Series Resistance in Gate-Recessed Nanoscale SOI MOSFETs. Active and Passive Electronic Components،Vol. 2013, no. 2013, pp.1-10.
https://search.emarefa.net/detail/BIM-499142
Modern Language Association (MLA)
Karsenty, Avraham& Chelly, Avraham. Modeling of the Channel Thickness Influence on Electrical Characteristics and Series Resistance in Gate-Recessed Nanoscale SOI MOSFETs. Active and Passive Electronic Components No. 2013 (2013), pp.1-10.
https://search.emarefa.net/detail/BIM-499142
American Medical Association (AMA)
Karsenty, Avraham& Chelly, Avraham. Modeling of the Channel Thickness Influence on Electrical Characteristics and Series Resistance in Gate-Recessed Nanoscale SOI MOSFETs. Active and Passive Electronic Components. 2013. Vol. 2013, no. 2013, pp.1-10.
https://search.emarefa.net/detail/BIM-499142
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-499142