A New XOR Structure Based on Resonant-Tunneling High Electron Mobility Transistor
Joint Authors
Bahrepour, Davoud
Sharifi, Mohammad Javad
Source
Issue
Vol. 2009, Issue 2009 (31 Dec. 2009), pp.1-9, 9 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2009-08-19
Country of Publication
Egypt
No. of Pages
9
Main Subjects
Engineering Sciences and Information Technology
Abstract EN
A new structure for an exclusive-OR (XOR) gate based on the resonant-tunneling high electron mobility transistor (RTHEMT) is introduced which comprises only an RTHEMT and two FETs.
Calculations are done by utilizing a new subcircuit model for simulating the RTHEMT in the SPICE simulator.
Details of the design, input, and output values and margins, delay of each transition, maximum operating frequency, static and dynamic power dissipations of the new structure are discussed and calculated and the performance is compared with other XOR gates which confirm that the presented structure has a high performance.
Furthermore, to the best of authors' knowledge, it has the least component count in comparison to the existing structures.
American Psychological Association (APA)
Sharifi, Mohammad Javad& Bahrepour, Davoud. 2009. A New XOR Structure Based on Resonant-Tunneling High Electron Mobility Transistor. VLSI Design،Vol. 2009, no. 2009, pp.1-9.
https://search.emarefa.net/detail/BIM-499346
Modern Language Association (MLA)
Sharifi, Mohammad Javad& Bahrepour, Davoud. A New XOR Structure Based on Resonant-Tunneling High Electron Mobility Transistor. VLSI Design No. 2009 (2009), pp.1-9.
https://search.emarefa.net/detail/BIM-499346
American Medical Association (AMA)
Sharifi, Mohammad Javad& Bahrepour, Davoud. A New XOR Structure Based on Resonant-Tunneling High Electron Mobility Transistor. VLSI Design. 2009. Vol. 2009, no. 2009, pp.1-9.
https://search.emarefa.net/detail/BIM-499346
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-499346
