Analytic Model for Conduction Current in AlGaNGaN HFETsHEMTs

Abstract EN

We have developed a new, zone-based compact physics-based AlGaN/GaN heterojunction field-effect transistor (HFET) model suitable for use in commercial harmonic-balance microwave circuit simulators.

The new model is programmed in Verilog-A, an industry-standard compact modeling language.

The new model permits the dc, small-signal, and large-signal RF performance for the transistor to be determined as a function of the device geometric structure and design features, material composition parameters, and dc and RF operating conditions.

The new physics-based HFET model does not require extensive parameter extraction to determine model element values, as commonly employed for traditional equivalent-circuit-based transistor models.

The new model has been calibrated and verified.

We report very good agreement between simulated and measured dc and RF performance of an experimental C-band microwave power amplifier.