Defects Induced Room Temperature Ferromagnetism in ZnO Thin Films
Joint Authors
Zhang, Xiao
Meng, Fanbin
Tang, C. C.
Zhang, Xinghua
Xu, Xuewen
Zhang, Wei
Source
Advances in Condensed Matter Physics
Issue
Vol. 2014, Issue 2014 (31 Dec. 2014), pp.1-6, 6 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2014-02-19
Country of Publication
Egypt
No. of Pages
6
Main Subjects
Abstract EN
Polycrystalline ZnO thin films are prepared by the co-sputtering method under different oxygen partial pressures.
Films deposited in pure argon gas exhibit ferromagnetism, whereas other films deposited under different oxygen partial pressures are diamagnetism.
XPS results show the presence of Zn interstitial and oxygen vacancy in all of samples.
Further analysis indicates that Zn interstitial may play an important role in triggering magnetic order on the undoped ZnO thin films by inducing an alteration of electronic configuration.
American Psychological Association (APA)
Zhang, Xiao& Zhang, Wei& Zhang, Xinghua& Xu, Xuewen& Meng, Fanbin& Tang, C. C.. 2014. Defects Induced Room Temperature Ferromagnetism in ZnO Thin Films. Advances in Condensed Matter Physics،Vol. 2014, no. 2014, pp.1-6.
https://search.emarefa.net/detail/BIM-499556
Modern Language Association (MLA)
Zhang, Xiao…[et al.]. Defects Induced Room Temperature Ferromagnetism in ZnO Thin Films. Advances in Condensed Matter Physics No. 2014 (2014), pp.1-6.
https://search.emarefa.net/detail/BIM-499556
American Medical Association (AMA)
Zhang, Xiao& Zhang, Wei& Zhang, Xinghua& Xu, Xuewen& Meng, Fanbin& Tang, C. C.. Defects Induced Room Temperature Ferromagnetism in ZnO Thin Films. Advances in Condensed Matter Physics. 2014. Vol. 2014, no. 2014, pp.1-6.
https://search.emarefa.net/detail/BIM-499556
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-499556