Tunnel Magnetoresistance of Fe3O4MgOFe Nanostructures
Joint Authors
Epshtein, E. M.
Malikov, I. V.
Zilberman, P. E.
Mikhailov, G. M.
Chigarev, S. G.
Source
Issue
Vol. 2011, Issue 2011 (31 Dec. 2011), pp.1-3, 3 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2011-10-15
Country of Publication
Egypt
No. of Pages
3
Main Subjects
Abstract EN
A magnetic tunnel junction Fe3O4/MgO/Fe with (001) layer orientation is considered.
The junction magnetic energy is analyzed as a function of the angle between the layer magnetization vectors under various magnetic fields.
The tunnel magnetoresistance is calculated as a function of the external magnetic field.
In contrast with junctions with unidirectional anisotropy, a substantially lower magnetic field is required for the junction switching.
American Psychological Association (APA)
Chigarev, S. G.& Epshtein, E. M.& Malikov, I. V.& Mikhailov, G. M.& Zilberman, P. E.. 2011. Tunnel Magnetoresistance of Fe3O4MgOFe Nanostructures. ISRN Condensed Matter Physics،Vol. 2011, no. 2011, pp.1-3.
https://search.emarefa.net/detail/BIM-501273
Modern Language Association (MLA)
Chigarev, S. G.…[et al.]. Tunnel Magnetoresistance of Fe3O4MgOFe Nanostructures. ISRN Condensed Matter Physics No. 2011 (2011), pp.1-3.
https://search.emarefa.net/detail/BIM-501273
American Medical Association (AMA)
Chigarev, S. G.& Epshtein, E. M.& Malikov, I. V.& Mikhailov, G. M.& Zilberman, P. E.. Tunnel Magnetoresistance of Fe3O4MgOFe Nanostructures. ISRN Condensed Matter Physics. 2011. Vol. 2011, no. 2011, pp.1-3.
https://search.emarefa.net/detail/BIM-501273
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-501273
