Comparative Study of Gamma Radiation Effects on Solar Cells, Photodiodes, and Phototransistors

Abstract EN

This paper presents the behavior of various optoelectronic devices after gamma irradiation.

A number of PIN photodiodes, phototransistors, and solar panels have been exposed to gamma irradiation.

Several types of photodiodes and phototransistors were used in the experiment.

I-V characteristics (current dependance on voltage) of these devices have been measured before and after irradiation.

The process of annealing has also been observed.

A comparative analysis of measurement results has been performed in order to determine the reliability of optoelectronic devices in radiation environments.